Категории
  • Single FETs, MOSFETs(334)
Результат:(334)

Список RFQ (0Проекты)

Reset

  • img

    G75P04SI

    P-40V,-11A,RD(MAX)<8M@-10V,VTH-1

    Goford Semiconductor

  • img

    GT040N04D5I

    N40V,110A,RD<3.5M@10V,VTH1.0V~2.

    Goford Semiconductor

  • img

    GT080N10KI

    N100V,65A,RD<8M@10V,VTH1.0V~2.5V

    Goford Semiconductor

  • img

    G75P04D5I

    P-40V,-70A,RD(MAX)<6.5M@-10V,VTH

    Goford Semiconductor

  • img

    G75P04TI

    P-40V,-70A,RD(MAX)<7M@-10V,VTH-1

    Goford Semiconductor

  • img

    GT52N10D5I

    N100V,65A,RD<8M@10V,VTH1.0V~2.5V

    Goford Semiconductor

  • img

    GT080N10TI

    N100V,65A,RD<8M@10V,VTH1.0V~2.5V

    Goford Semiconductor

  • img

    2002A

    N190V,5A,RD<540M@10V,VTH1.0V~3.0

    Goford Semiconductor

  • img

    G75P04FI

    P-40V,-60A,RD(MAX)<7M@-10V,VTH-1

    Goford Semiconductor

  • img

    GT016N10Q

    MOSFET N-CH 100V 228A TO-247

    Goford Semiconductor

  • img

    GT035N12T

    MOSFET N-CH 120V 180A TO-220

    Goford Semiconductor

  • img

    GT038P06M

    MOSFET P-CH 60V 200A 350W TO-26

    Goford Semiconductor

  • img

    GT025N06AM6

    N60V,170A,RD<2.0M@10V,VTH1.2V~2.

    Goford Semiconductor

  • img

    GT007N04TL

    N40V,150A,RD<1.5M@10V,VTH1.0V~2.

    Goford Semiconductor

  • img

    GT009N04D5

    N40V,100A,RD<1.3M@10V,VTH1.0V~2.

    Goford Semiconductor

  • img

    G28N02T

    N20V, 28A, RD<[email protected],VTH0.5V~

    Goford Semiconductor

  • img

    GT013N04D5

    N40V,195A,RD<1.7M@10V,VTH2.0V~4.

    Goford Semiconductor

  • img

    GT080N08D5

    N85V,65A,RD<8.5M@10V,VTH2.0V~4.0

    Goford Semiconductor

  • img

    20N06

    N60V,25A,RD<24M@10V,VTH1.0V~2.5V

    Goford Semiconductor

  • img

    GT100N04K

    N40V,50A,RD<10M@10V,VTH1.2V~2.2V

    Goford Semiconductor

  • Total 334
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
    • 17
    Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
    СЕРТИФИКАЦИЯ
    memberiso
    Semimall Electronics - дистрибьютор электронных компонентов в России
    Copyright © 2021 - 2024 SEMiMall. All rights reserved.