Категории
  • Single FETs, MOSFETs(1,064)
Результат:(1064)

Список RFQ (0Проекты)

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    TJ20A10M3(STA4,Q

    TJ20A10M3(STA4,Q

    Toshiba Semiconductor and Storage

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    TJ9A10M3,S4Q

    TJ9A10M3,S4Q

    Toshiba Semiconductor and Storage

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    SSM3K121TU

    MOSFET N-CH 20V 3.5A SC70

    Toshiba Semiconductor and Storage

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    SSM3K15CT,L3F

    MOSFET N-CH 30V 100MA CST3

    Toshiba Semiconductor and Storage

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    TK370A60F,S4X(S

    MOSFET N-CH

    Toshiba Semiconductor and Storage

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    TK430A60F,S4X(S

    MOSFET N-CH

    Toshiba Semiconductor and Storage

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    TPCA8128,L1Q

    MOSFET P-CH 30V 34A 8SOP

    Toshiba Semiconductor and Storage

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    TK12J60W,S1VE(S

    MOSFET N-CH 600V 11.5A TO3P

    Toshiba Semiconductor and Storage

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    TPCC8104,L1Q

    MOSFET P-CH 30V 20A 8TSON

    Toshiba Semiconductor and Storage

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    TK40J20D,S1F(O

    MOSFET N-CH 200V 40A TO3P

    Toshiba Semiconductor and Storage

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    TPCC8136.LQ

    MOSFET P-CH 20V 9.4A 8TSON

    Toshiba Semiconductor and Storage

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    TPCC8105,L1Q(CM

    MOSFET P-CH 30V 23A 8TSON

    Toshiba Semiconductor and Storage

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    TPCC8104,L1Q(CM

    MOSFET P-CH 30V 20A 8TSON

    Toshiba Semiconductor and Storage

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    TPCA8109(TE12L1,V

    MOSFET P-CH 30V 24A 8SOP

    Toshiba Semiconductor and Storage

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    TPCA8052-H(T2L1,VM

    MOSFET N-CH 40V 20A 8SOP

    Toshiba Semiconductor and Storage

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    TPCA8047-H(T2L1,VM

    MOSFET N-CH 40V 32A 8SOP

    Toshiba Semiconductor and Storage

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    TK2P60D(TE16L1,NV)

    MOSFET N-CH 600V 2A PW-MOLD

    Toshiba Semiconductor and Storage

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    TK1P90A,LQ(CO

    MOSFET N-CH 900V 1A PW-MOLD

    Toshiba Semiconductor and Storage

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    TK12P60W,RVQ(S

    MOSFET N-CH 600V 11.5A DPAK

    Toshiba Semiconductor and Storage

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    TPCP8J01(TE85L,F,M

    MOSFET P-CH 32V 5.5A PS-8

    Toshiba Semiconductor and Storage

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    Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
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