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  • Single FETs, MOSFETs(23)
Результат:(23)

Список RFQ (0Проекты)

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    NC1M120C12HTNG

    SiC MOSFET N 1200V 12mohm 214A

    NextGen Components

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    NC1M120C40HTNG

    SiC MOSFET N 1200V 40mohm 75A 4

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    NC1M120C40GTNG

    SiC MOSFET N 1200V 40mohm 76A 3

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    NC1M120C75HTNG

    SiC MOSFET N 1200V 75mohm 47A 4

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    NC1M120C75GTNG

    SiC MOSFET N 1200V 75mohm 47A 3

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    NC1M120C75RRNG

    SiC MOSFET N 1200V 75mohm 46A 7

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    TO220FMD12N65F

    MOSFET TO-220F N 650V 12A

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    TO220FMD10N65F

    MOSFET TO-220F N 650V 10A

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    TO220FMDD7N65F

    MOSFET TO-220F N 650V 7A

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    TO220FMDD4N65F

    MOSFET TO-220F N 650V 4A

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    TO252MDD7N65DS

    MOSFET TO-252 N 650V 7A

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    TO252MDD4N65DS

    MOSFET TO-252 N 650V 4A

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    MDD3401A

    MOSFET P-CH -30V -4.2A SOT23

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    MDD3400A

    MOSFET N-CH 30V 5.8A SOT23

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    MDD2305

    MOSFET P-CH -20V -4.2A SOT23

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    MDD3407

    MOSFET P-CH -30V -4.1A SOT23

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    MDD3401

    MOSFET P-CH -30V -4.2A SOT23

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    MDD3400

    MOSFET N-CH 30V 5.8A SOT23

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    MDD2301

    MOSFET P-CH -20V -3.0A SOT23

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    MDD2302

    MOSFET N-CH 20V 4.0A SOT23

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  • Total 23
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    Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
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