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  • Single Bipolar Transistors(409)
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    2SC6000(TE16L1,NQ)

    2SC6000(TE16L1,NQ)

    Toshiba Semiconductor and Storage

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    2SA1586-Y(T5LND,F)

    TRANS PNP 50V 0.15A SC70

    Toshiba Semiconductor and Storage

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    2SC5819(TE12L,ZF)

    TRANS NPN 20V 1.5A PW-MINI

    Toshiba Semiconductor and Storage

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    2SC5714(TE12L,ZF)

    TRANS NPN 20V 4A PW-MINI

    Toshiba Semiconductor and Storage

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    2SA2060(TE12L,ZF)

    TRANS PNP 50V 2A PW-MINI

    Toshiba Semiconductor and Storage

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    2SC6142(Q)

    TRANS NPN 375V 1.5A PW-MOLD2

    Toshiba Semiconductor and Storage

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    2SC5198-O(S1,E

    TRANS NPN 140V 10A TO3P

    Toshiba Semiconductor and Storage

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    TPC6503(TE85L,F,M)

    TRANS NPN 30V 1.5A VS-6

    Toshiba Semiconductor and Storage

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    2SA1721RTE85LF

    TRANS PNP 300V 0.1A SMINI

    Toshiba Semiconductor and Storage

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    2SA1020-Y,T6NSF(J

    TRANS PNP 50V 2A TO92MOD

    Toshiba Semiconductor and Storage

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    2SA1020-Y,F(M

    TRANS PNP 50V 2A TO92MOD

    Toshiba Semiconductor and Storage

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    TTC009,F(M

    TRANS NPN 80V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    TTC009,F(J

    TRANS NPN 80V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    2SD2695,T6F(J

    TRANS NPN 60V 2A TO92MOD

    Toshiba Semiconductor and Storage

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    2SD2695(T6CNO,A,F)

    TRANS NPN 60V 2A TO92MOD

    Toshiba Semiconductor and Storage

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    2SD2695(T6CANO,A,F

    TRANS NPN 60V 2A TO92MOD

    Toshiba Semiconductor and Storage

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    2SD2257,Q(J

    TRANS NPN 100V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    2SD2257,KEHINQ(J

    TRANS NPN 100V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    2SD2257(Q,M)

    TRANS NPN 100V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    2SD2257(CANO,Q,M)

    TRANS NPN 100V 3A TO220NIS

    Toshiba Semiconductor and Storage

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    Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.
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