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  • FET, MOSFET Arrays(105)
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    KGF20N05D

    MOSFET 2N-CH 5.5V 20A 20WLCSP

    Renesas Electronics Corporation

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    KGF20N035D

    MOSFET N-CH 20WLCSP

    Renesas Electronics Corporation

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    KGF16N05D-400W

    MOSFET 2N-CH 5.5V 16A 20WLCSP

    Renesas Electronics Corporation

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    UPA2381T1P-E1-A

    MOSFET

    Renesas Electronics Corporation

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    UPA672CT-T1-AT

    MOSFET 2N-CH 60V 0.1A SC88

    Renesas Electronics Corporation

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    UPA2381AT1P-E1-A

    MOSFET N-CH DUAL LGA

    Renesas Electronics Corporation

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    UPA2374T1P-E1-A

    MOSFET N-CH DUAL LGA

    Renesas Electronics Corporation

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    UPA2350T1P-E4-A

    MOSFET 2N-CH 20V 6A LGA

    Renesas Electronics Corporation

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    UPA1952TE-T1-A

    MOSFET 2P-CH 20V 2A SC95

    Renesas Electronics Corporation

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    UPA1950TE-T1-AT

    MOSFET 2P-CH 12V 2.5A SC95

    Renesas Electronics Corporation

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    HAT2210RWS-E

    MOSFET 2N-CH 30V 7.5A/8A 8SOP

    Renesas Electronics Corporation

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    HAT2038RWS-E

    MOSFET 2N-CH 60V 5A 8SOP

    Renesas Electronics Corporation

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    UPA1764G-E1-A

    MOSFET

    Renesas Electronics Corporation

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    UPA1763G-E2-A

    MOSFET 4.5A

    Renesas Electronics Corporation

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    UPA1763G-E1-A

    MOSFET 4.5A

    Renesas Electronics Corporation

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    UPA1981TE-T1-A

    MOSFET

    Renesas Electronics Corporation

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    KGF6N05D-400

    MOSFET 2N-CH 5.5V 12A 20WLCSP

    Renesas Electronics Corporation

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    GWS4621L

    MOSFET 2N-CH 20V 10.1A 4WLCSP

    Renesas Electronics Corporation

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    KGF16N05D-400

    MOSFET 2N-CH 5.5V 16A 20WLCSP

    Renesas Electronics Corporation

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    GWS9294

    MOSFET 2N-CH 20V 10.1A 4QFN

    Renesas Electronics Corporation

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    Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
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