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  • FET, MOSFET Arrays(101)
Результат:(101)

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    TPC8227-H,LQ

    MOSFET 2N-CH 40V 5.1A 8SOP

    Toshiba Semiconductor and Storage

  • img

    TPC8228-H,LQ

    MOSFET 2N-CH 60V 3.8A 8SOP

    Toshiba Semiconductor and Storage

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    SSM6L13TU(T5L,F,T)

    MOSFET N/P-CH 20V 800MA UF6

    Toshiba Semiconductor and Storage

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    SSM6P35FE,LM

    MOSFET 2P-CH 20V 0.1A ES6

    Toshiba Semiconductor and Storage

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    SSM6N48FU,RF(D

    MOSFET 2N-CH 30V 0.1A US6

    Toshiba Semiconductor and Storage

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    SSM6L11TU(TE85L,F)

    MOSFET N/P-CH 20V 0.5A UF6

    Toshiba Semiconductor and Storage

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    SSM6N7002BFU,LF

    MOSFET 2N-CH 60V 0.2A US6

    Toshiba Semiconductor and Storage

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    TPCL4203(TE85L,F)

    MOSFET 2N-CH 4CHIP LGA

    Toshiba Semiconductor and Storage

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    TPCL4202(TE85L,F)

    MOSFET 2N-CH 4CHIP LGA

    Toshiba Semiconductor and Storage

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    TPCL4201(TE85L,F)

    MOSFET 2N-CH 4CHIP LGA

    Toshiba Semiconductor and Storage

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    TPC8407,LQ(S

    MOSFET N/P-CH 30V 9A/7.4A 8SOP

    Toshiba Semiconductor and Storage

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    TPC8223-H,LQ(S

    MOSFET 2N-CH 30V 9A 8SOP

    Toshiba Semiconductor and Storage

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    TPC8221-H,LQ(S

    MOSFET 2N-CH 30V 6A 8SOP

    Toshiba Semiconductor and Storage

  • img

    SSM6P35FE(TE85L,F)

    MOSFET 2P-CH 20V 0.1A ES6

    Toshiba Semiconductor and Storage

  • img

    SSM6N7002BFU(T5L,F

    MOSFET 2N-CH 60V 0.2A US6

    Toshiba Semiconductor and Storage

  • img

    SSM6N42FE(TE85L,F)

    MOSFET 2N-CH 20V 0.8A ES6

    Toshiba Semiconductor and Storage

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    SSM6N37CTD(TPL3)

    MOSFET 2N-CH 20V 0.25A CST6D

    Toshiba Semiconductor and Storage

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    TPC8213-H(TE12LQ,M

    MOSFET 2N-CH 60V 5A 8SOP

    Toshiba Semiconductor and Storage

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    TPC8212-H(TE12LQ,M

    MOSFET 2N-CH 30V 6A 8SOP

    Toshiba Semiconductor and Storage

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    TPC8211(TE12L,Q,M)

    MOSFET 2N-CH 30V 5.5A 8SOP

    Toshiba Semiconductor and Storage

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    Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
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