Категории
  • Bipolar Transistor Arrays, Pre-Biased(337)
Результат:(337)

Список RFQ (0Проекты)

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    RN49A1FE(TE85L,F)

    PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

    Toshiba Semiconductor and Storage

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    RN49A1(TE85L,F)

    PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

    Toshiba Semiconductor and Storage

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    RN46A1(TE85L,F)

    PNP + NPN BRT Q1BSR=22KOHM Q1BER

    Toshiba Semiconductor and Storage

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    RN2714,LF

    PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM

    Toshiba Semiconductor and Storage

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    RN4902,LF

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN4901,LF

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN2904,LF

    TRANS 2PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN2903,LF

    TRANS 2PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN2902,LF

    TRANS 2PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN1907,LF

    TRANS 2NPN PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN1906,LF

    TRANS 2NPN PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN1905,LF

    TRANS 2NPN PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN1706JE(TE85L,F)

    TRANS 2NPN PREBIAS 0.1W ESV

    Toshiba Semiconductor and Storage

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    RN4902FE(TE85L,F)

    TRANS NPN/PNP PREBIAS 0.1W ES6

    Toshiba Semiconductor and Storage

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    RN1503(TE85L,F)

    TRANS 2NPN PREBIAS 0.3W SMV

    Toshiba Semiconductor and Storage

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    RN49A1(T5L,F,T)

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN4911(T5L,F,T)

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN4910(T5L,F,T)

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN4909(T5L,F,T)

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    RN4908(T5L,F,T)

    TRANS NPN/PNP PREBIAS 0.2W US6

    Toshiba Semiconductor and Storage

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    Pre-biased bipolar transistor arrays incorporate two or more bipolar transistors, along with resistors connected to each transistor in a manner likely to be useful, typically with one resistor between each transistor's emitter and base terminals, and another connected to each transistor's base terminal and a user-accessible pin on the device package.
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